Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set

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Abstract

We present an efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set. In the first part the application of Pulay's DIIS method (direct inversion in the iterative subspace) to the iterative diagonalization of large matrices will be discussed. Our approach is stable, reliable, and minimizes the number of order ${\mathit{N}}_{\mathrm{atoms}}^{3}$ operations. In the second part, we will discuss an efficient mixing scheme also based on Pulay's scheme. A special ``metric'' and a special ``preconditioning'' optimized for a plane-wave basis set will be introduced. Scaling of the method will be discussed in detail for non-self-consistent and self-consistent calculations. It will be shown that the number of iterations required to obtain a specific precision is almost independent of the system size. Altogether an order ${\mathit{N}}_{\mathrm{atoms}}^{2}$ scaling is found for systems containing up to 1000 electrons. If we take into account that the number of k points can be decreased linearly with the system size, the overall scaling can approach ${\mathit{N}}_{\mathrm{atoms}}$. We have implemented these algorithms within a powerful package called VASP (Vienna ab initio simulation package). The program and the techniques have been used successfully for a large number of different systems (liquid and amorphous semiconductors, liquid simple and transition metals, metallic and semiconducting surfaces, phonons in simple metals, transition metals, and semiconductors) and turned out to be very reliable. \textcopyright{} 1996 The American Physical Society.

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Autori: Georg Kresse iD ORCID 0000-0001-9102-4259 (TU Wien); Jürgen Furthmüller iD ORCID 0000-0001-8846-7403 (TU Wien; Friedrich Schiller University Jena)
Pubblicato in: Physical review. B, Condensed matter, vol. 54, n. 16, pp. 11169-11186
Data di pubblicazione:15/10/1996
Editore:American Physical Society
Tipo di documento:Articolo
Lingua:inglese
DOI: 10.1103/physrevb.54.11169
ISSN:0163-1829, 1095-3795
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Citazioni ricevute:123.338
Soggetti:
Advanced Chemical Physics Studies (Physical Sciences > Physics and Astronomy > Atomic and Molecular Physics, and Optics)
Physics of Superconductivity and Magnetism (Physical Sciences > Physics and Astronomy > Condensed Matter Physics)
Matrix Theory and Algorithms (Physical Sciences > Computer Science > Computational Theory and Mathematics)
Identificativi: OpenAlex W2083222334 · PMID 9984901

Dati dell'indice centrale: OpenAlex (licenza CC0).

Descrizione
Riassunto:We present an efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set. In the first part the application of Pulay's DIIS method (direct inversion in the iterative subspace) to the iterative diagonalization of large matrices will be discussed. Our approach is stable, reliable, and minimizes the number of order ${\mathit{N}}_{\mathrm{atoms}}^{3}$ operations. In the second part, we will discuss an efficient mixing scheme also based on Pulay's scheme. A special ``metric'' and a special ``preconditioning'' optimized for a plane-wave basis set will be introduced. Scaling of the method will be discussed in detail for non-self-consistent and self-consistent calculations. It will be shown that the number of iterations required to obtain a specific precision is almost independent of the system size. Altogether an order ${\mathit{N}}_{\mathrm{atoms}}^{2}$ scaling is found for systems containing up to 1000 electrons. If we take into account that the number of k points can be decreased linearly with the system size, the overall scaling can approach ${\mathit{N}}_{\mathrm{atoms}}$. We have implemented these algorithms within a powerful package called VASP (Vienna ab initio simulation package). The program and the techniques have been used successfully for a large number of different systems (liquid and amorphous semiconductors, liquid simple and transition metals, metallic and semiconducting surfaces, phonons in simple metals, transition metals, and semiconductors) and turned out to be very reliable. \textcopyright{} 1996 The American Physical Society.
ISSN:0163-1829
1095-3795
DOI:10.1103/physrevb.54.11169