Electrodeposition of In‐Se, Cu‐Se, and Cu‐In‐Se Thin Films

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Abstract

Indium‐selenium, copper‐selenium, and copper‐indium‐selenium thin films have been prepared by electrodeposition techniques on molybdenum substrates. Electrodeposited precursors are prepared at varying potentials, pH, and deposition times. The adhesion and uniformity of indium selenide on molybdenum substrates are improved by electrodepositing an initial copper layer (500 Å) on molybdenum. The films (In‐Se, Cu‐Se, and Cu‐In‐Se) are annealed at 250 and 450°C in Ar for 15 min and are slow‐cooled (3°C/min). The films are characterized by electron microprobe analysis, inductive‐coupled plasma spectrometry, x‐ray diffraction analysis, Auger electron spectroscopy, and scanning electron microscopy. The as‐deposited precursor films are loaded in a physical evaporation chamber and additional In or Cu and Se are added to the film to adjust the final composition to . The device fabricated using electrodeposited Cu‐In‐Se precursor layers resulted in a solar cell efficiency of 9.4%.

Salvato in:
Autori: R. N. Bhattacharya (National Laboratory of the Rockies); Arturo Fernández iD (National Laboratory of the Rockies); Miguel Á. Contreras (National Laboratory of the Rockies); J. Keane (National Laboratory of the Rockies); Andrew L. Tennant (National Laboratory of the Rockies); K. Ramanathan (National Laboratory of the Rockies); John R. Tuttle iD (National Laboratory of the Rockies); Rommel N. Noufi (National Laboratory of the Rockies); A. M. Hermann (National Laboratory of the Rockies)
Pubblicato in: Journal of The Electrochemical Society, vol. 143, n. 3, pp. 854-858
Data di pubblicazione:01/03/1996
Editore:Institute of Physics
Tipo di documento:Articolo
Lingua:inglese
DOI: 10.1149/1.1836548
ISSN:0013-4651, 1945-7111
Accesso aperto: Accesso aperto Bronze: lettura gratuita presso l'editore, senza licenza aperta – Journal of The Electrochemical Society
Citazioni ricevute:55
Soggetti:
Chalcogenide Semiconductor Thin Films (Physical Sciences > Engineering > Electrical and Electronic Engineering)
Advanced Materials and Semiconductor Technologies (Physical Sciences > Materials Science > Materials Chemistry)
Phase-change materials and chalcogenides (Physical Sciences > Materials Science > Materials Chemistry)
electrodeposition, indium selenide, copper selenide, CuInSe2, thin films, molybdenum substrate, precursor films, annealing, film adhesion, film uniformity, solar cells, solar cell efficiency
Identificativi: OpenAlex W1967804931

Dati dell'indice centrale: OpenAlex (licenza CC0).

Riassunto:Indium‐selenium, copper‐selenium, and copper‐indium‐selenium thin films have been prepared by electrodeposition techniques on molybdenum substrates. Electrodeposited precursors are prepared at varying potentials, pH, and deposition times. The adhesion and uniformity of indium selenide on molybdenum substrates are improved by electrodepositing an initial copper layer (500 Å) on molybdenum. The films (In‐Se, Cu‐Se, and Cu‐In‐Se) are annealed at 250 and 450°C in Ar for 15 min and are slow‐cooled (3°C/min). The films are characterized by electron microprobe analysis, inductive‐coupled plasma spectrometry, x‐ray diffraction analysis, Auger electron spectroscopy, and scanning electron microscopy. The as‐deposited precursor films are loaded in a physical evaporation chamber and additional In or Cu and Se are added to the film to adjust the final composition to . The device fabricated using electrodeposited Cu‐In‐Se precursor layers resulted in a solar cell efficiency of 9.4%.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1836548