Electrodeposition of In‐Se, Cu‐Se, and Cu‐In‐Se Thin Films
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Abstract
Indium‐selenium, copper‐selenium, and copper‐indium‐selenium thin films have been prepared by electrodeposition techniques on molybdenum substrates. Electrodeposited precursors are prepared at varying potentials, pH, and deposition times. The adhesion and uniformity of indium selenide on molybdenum substrates are improved by electrodepositing an initial copper layer (500 Å) on molybdenum. The films (In‐Se, Cu‐Se, and Cu‐In‐Se) are annealed at 250 and 450°C in Ar for 15 min and are slow‐cooled (3°C/min). The films are characterized by electron microprobe analysis, inductive‐coupled plasma spectrometry, x‐ray diffraction analysis, Auger electron spectroscopy, and scanning electron microscopy. The as‐deposited precursor films are loaded in a physical evaporation chamber and additional In or Cu and Se are added to the film to adjust the final composition to . The device fabricated using electrodeposited Cu‐In‐Se precursor layers resulted in a solar cell efficiency of 9.4%.
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| Authors: | ; ; ; ; ; ; ; ; |
|---|---|
| Published in: | Journal of The Electrochemical Society, vol. 143, no. 3, pp. 854-858 |
| Publication date: | 01/03/1996 |
| Publisher: | Institute of Physics |
| Document type: | Article |
| Language: | English |
| DOI: | 10.1149/1.1836548 |
| ISSN: | 0013-4651, 1945-7111 |
| Open access: | Open access Bronze: free to read at the publisher, without an open license – Journal of The Electrochemical Society |
| Cited by: | 55 |
| Subjects: |
Chalcogenide Semiconductor Thin Films
(Physical Sciences > Engineering > Electrical and Electronic Engineering)
Advanced Materials and Semiconductor Technologies
(Physical Sciences > Materials Science > Materials Chemistry)
Phase-change materials and chalcogenides
(Physical Sciences > Materials Science > Materials Chemistry)
|
| Identifiers: | OpenAlex W1967804931 |
Central index data: OpenAlex (CC0 license).
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